SiHFIBC40GLC Power MOSFET

Vishay

Description

www.vishay.com IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max.(nC) Qgs (nC) Qgd (nC) Configur.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: SiHFIBC40GLC
Manufacturer: Vishay ↗
File Size: 886.65 KB
Datasheet: SiHFIBC40GLC-Vishay.pdf
Description: Power MOSFET

Features

* Isolated package
* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Available
* Sink to lead creepage distance = 4.8 mm Available
* Dynamic dV/dt rating
* Low thermal resistance
* Material categorization: for definitions of compliance

Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single sc

SiHFIBC40GLC Distributors

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SiHFIBC40GLC Power MOSFET Vishay

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