SiHFIBC40G Datasheet - Vishay Siliconix

Power MOSFET

SiHFIBC40G Features

* 600 1.2 Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz)

* Dynamic dV/dt Rating

* Lead (Pb)-free Available

* Available RoHS

* COMPLIANT www.DataSheet4U.c

SiHFIBC40G General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moldin.

SiHFIBC40G Datasheet (1.20 MB)

SiHFIBC40G Datasheet Preview — Preview of SiHFIBC40G PDF

Datasheet Details

Part number:

SiHFIBC40G

Manufacturer:

Vishay ↗ Siliconix

File Size:

1.20 MB

Description:

Power mosfet.
IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 60 .

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SiHFIBC40G Power MOSFET Vishay Siliconix

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SiHFIBC40G Features

SiHFIBC40G General Description

Datasheet Details

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Description:

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