SiHFIBC40G Datasheet, Mosfet, Vishay Siliconix

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SiHFIBC40G

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Power mosfet. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design

600 1.2 Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz)
Dynamic dV/dt Rating
Le

The molding compound used provides a high isolation capability and a low thermal resistance between the tab

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SiHFIBC40G Power MOSFET Vishay Siliconix