SiHFIBE20G Power MOSFET

Vishay Siliconix

Description

IRFIBE20G, SiHFIBE20G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 38 .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: SiHFIBE20G
Manufacturer: Vishay ↗ Siliconix
File Size: 1.28 MB
Datasheet: SiHFIBE20G_VishaySiliconix.pdf
Description: Power MOSFET

Features

* 800 6.5 www. DataSheet4U. com TO-220 FULLPAK
* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to Lead Creepage Distance = 4.8 mm
* Dynamic dV/dt Rating
* Low Thermal Resistance
* Lead (Pb)-free Available Available

Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single sc

SiHFIBE20G Distributors

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SiHFIBE20G Power MOSFET Vishay Siliconix

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