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SiHFIB7N50A Power MOSFET

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Description

IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = .

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Features

* Low Gate Charge Qg Results in Simple Drive Requirement Available
* Improved Gate, Avalanche and Dynamic dV/dt RoHS
* Ruggedness COMPLIANT
* Fully Characterized Capacitance and Avalanche Voltage and Current
* Effective Coss Specified
* Compliant to

Applications

* Switch Mode Power Supply (SMPS)
* Uninterruptible Power Supply
* High Speed Power Switching
* High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) TYPICAL SMPS TOPOLOGIES
* Two Transistor Forward
* Half and Full Bridge Convertors
* Power

SiHFIB7N50A Distributors

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