4N25GV Datasheet - Vishay Telefunken

4N25GV Optocoupler

The 4N25(G)V/ 4N35(G)V series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest s.

4N25GV Features

* Approvals: D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 D Rated recurring peak voltage (repetitive) D Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation ≥ 0.75 mm Genera

4N25GV_VishayTelefunken.pdf