Datasheet Details
| Part number | AN605 |
|---|---|
| Manufacturer | Vishay |
| File Size | 116.53 KB |
| Description | Power MOSFET |
| Datasheet |
 AN605 Datasheet
|
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|
| Part number | AN605 |
|---|---|
| Manufacturer | Vishay |
| File Size | 116.53 KB |
| Description | Power MOSFET |
| Datasheet |
AN605 Datasheet
|
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|
|
Base resistance TABLE 1 Symbol RB Rg Gate resistance internal to the MOSFET Cgs Capacitance due to the overlap of the source and channel regions by the polysilicon gate.Independent of applied voltage.Consists of two parts: Cgd 1..Associated with the overlap of the polysilicon gate and the silicon underneath in the JFET region.Independent of applied voltage.2..The capacitance associated with the depletion region immediately under the gate.Non-linear function of voltage.This provid
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