AN605 Datasheet (Vishay)

AN605, Power MOSFET

Base resistance TABLE 1 Symbol RB Rg Gate resistance internal to the MOSFET Cgs Capacitance due to the overlap of the source and channel regions by the polysilicon gate.

Independent of applied voltage.

Consists of two parts: Cgd 1..

Associated with the overlap of the polysilicon gate and the

AN605 Vishay Siliconix Power MOSFET Basics: Understanding MOSFET Characteristics Associated With The Figure of Merit Jess Brown, Guy Moxey INTRODUCTION Power MOSFETs have become the standard choice as the main switching device for low-voltage (<200 V) switchmode power-supply (SMPS) converter applications.

However using manufacturers’ datasheets to choose or size the correct device for a specific circuit topology is becoming increasingly difficult.

The main criteria for MOSFET selection are the