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G16N50C SIHG16N50C

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Description

SiHG16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max.RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10.

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Features

* Low Figure-of-Merit Ron x Qg 0.38
* 100 % Avalanche Tested
* Gate Charge Improved
* Trr/Qrr Improved
* Compliant to RoHS Directive 2002/95/EC TO-247AC G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free TO-247AC SiHG16N50C-E3 ABSOLUTE

Applications

* are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular produ

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G16N50C SIHG16N50C Vishay
Vishay G16N50C-like datasheet