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IRFBE20 - Power MOSFET

IRFBE20 Description

www.vishay.com IRFBE20 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max.(nC) Qgs.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

IRFBE20 Features

* Dynamic dV/dt rating
* Repetitive avalanche rated Available
* Fast switching
* Ease of paralleling Available
* Simple drive requirements
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note
* Th

IRFBE20 Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free TO-220AB IRFBE20PbF IRFBE20PbF-BE3 ABSOLUTE MAX

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