Datasheet Details
- Part number
- IRFBE30
- Manufacturer
- Vishay ↗
- File Size
- 557.64 KB
- Datasheet
- IRFBE30-Vishay.pdf
- Description
- Power MOSFET
IRFBE30 Description
www.vishay.com IRFBE30 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max.(nC) Qgs.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.
IRFBE30 Features
* Dynamic dV/dt rating
* Repetitive avalanche rated
Available
* Fast switching
* Ease of paralleling
Available
* Simple drive requirements
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912
Note
* Th
IRFBE30 Applications
* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and halogen-free
TO-220AB IRFBE30PbF IRFBE30PbF-BE3
ABSOLUTE MAX
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