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IRFP044 Power MOSFET

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Description

Power MOSFET IRFP044, SiHFP044 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 9.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Features

* Dynamic dV/dt Rating
* Isolated Central Mounting Hole
* 175 °C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Lead (Pb)-free Available Available RoHS

Applications

* where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Pa

IRFP044 Distributors

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IRFP044N IRFP044NPbF IRFP044PbF IRFP040 IRFP042 IRFP048

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