* Trench MOS Schottky technology
* Lower power losses, high efficiency
* Low forward voltage drop
* High forward surge capability
* High frequency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definiti
MBRF10100CT Datasheet (85.22 KB)
MBRF10100CT
85.22 KB
Dual high voltage trench mos barrier schottky rectifier.
www.vishay.com
MBRF1090CT, MBRF10100CT
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
TMBS®
ITO-220AB
PIN 1 .
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