* Trench MOS Schottky technology
* Lower power losses, high efficiency
* Low forward voltage drop
* High forward surge capability
* High frequency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definiti
MBRF10100CT-M3 Datasheet (127.44 KB)
MBRF10100CT-M3
127.44 KB
Dual high voltage trench mos barrier schottky rectifier.
www.vishay.com
MBRF1090CT-M3, MBRF10100CT-M3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
TMBS®
ITO-220AB
.
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