MBRF1090CT-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com MBRF1090CT-M3, MBRF10100CT-M3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier TMBS® ITO-220AB .

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Datasheet Specifications

Part number: MBRF1090CT-M3
Manufacturer: Vishay ↗
File Size: 127.44 KB
Datasheet: MBRF1090CT-M3-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Lower power losses, high efficiency
* Low forward voltage drop
* High forward surge capability
* High frequency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definiti

Applications

* For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package 2 x 5.0 A 90 V, 100 V 120 A 0.75 V 150 °C ITO-220AB Circuit configuration Common cathode M

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MBRF1090CT-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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