SI7900EDN - Dual N-Channel 20-V (D-S) MOSFET - Common Drain
SI7900EDN Features
* PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.026 @ VGS = 4.5 V 20 0.031 @ VGS = 2.5 V 0.039 @ VGS = 1.8 V ID (A) 9 8 7 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPakt Package
* Low-Thermal Resistance, RthJC
* Low 1.07-mm Profile D 3000-V ESD Protection APPLICATIONS D Protection S