Drain Datasheet | Specifications & PDF Download

3PEAK TP1945 / TP1946 / TP1948 1.8V Micropower, RRIO, Open-Drain Output Comparators Features Description  Down to 1.8V Supply Voltage: 1.8V to 5.

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LMV331TP / LMV393TP General Purpose, 1.8V, RRI, Open-Drain Output Comparators Features Description  Down to 1.8V Supply Voltage: 1.8V to 5.5V  L

(534 views)

3PEAK TP1945 / TP1946 / TP1948 1.8V Micropower, RRIO, Open-Drain Output Comparators Features Description  Down to 1.8V Supply Voltage: 1.8V to 5.

(533 views)

3PEAK TP1945 / TP1946 / TP1948 1.8V Micropower, RRIO, Open-Drain Output Comparators Features Description  Down to 1.8V Supply Voltage: 1.8V to 5.

(533 views)

LMV331TP / LMV393TP General Purpose, 1.8V, RRI, Open-Drain Output Comparators Features Description  Down to 1.8V Supply Voltage: 1.8V to 5.5V  L

(530 views)

9926A Common Drain N-Channel Enhancement Mode MOSFET z Features VDS VGS RDSon TYP ID 21mR@4V5 z Applications ¾ Li-ion battery protection ; ¾ Loa

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Product Folder Order Now Technical Documents Tools & Software Support & Community CSD87501L SLPS523B – FEBRUARY 2015 – REVISED MAY 2019 CSD87501L

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AOCA32317 30V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RSS(ON) • ESD protection • Common drain c

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Primary lithium batteries G 06/2 3.0 V Primary lithium-sulfur dioxide (Li-SO 2) High drain capability AA - size spiral cell Benefits • High and stab

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AON6812 AlphaMOS 30V Common Drain N-Channel General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS •

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M54HC09 M74HC09 QUAD 2-INPUT AND GATE (OPEN DRAIN) . . . . . . . . HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.)

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www.DataSheet4U.com 74V2T03 DUAL 2-INPUT OPEN DRAIN NAND GATE s s s s s s HIGH SPEED: tPD = 5.4ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC =

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www.DataSheet4U.com AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8816 uses advanced trench t

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MM74C906 • MM74C907 Hex Open Drain N-Channel Buffers • Hex Open Drain P-Channel Buffers October 1987 Revised January 1999 MM74C906 • MM74C907 Hex Op

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Primary lithium battery BA 5567 3 V Primary lithium sulfur High drain capability dioxide (Li-SO2) 1/3 C-size spiral cell ■ ■ ■ ■ ■ ■ ■ ■

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Primary lithium batteries G 26 3.0 V Primary lithium-sulfur dioxide (Li-SO 2) High drain capability D - size spiral cell Benefits • High and stable

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Primary lithium batteries G 04/3 3.0 V Primary lithium-sulfur dioxide (Li-SO 2) High drain capability 1 /2 AA - size spiral cell Benefits • High and

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LESHAN RADIO COMPANY, LTD. Noninverting Buffer with Open Drain Output with LSTTL–Compatible Inputs L74VHC1GT07 The L74VHC1G07 is an advanced high spe

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Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design TLV3401, TLV3402, TLV3404 SLCS135B – AUGUST 2

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SMC3320W Common-Drain Dual N-Channel MOSFET ■DESCRIPTION SMC3320 is the Dual N-Channel enhancement mode power field effect transistors are using tre

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