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AO8800 Datasheet - ALPHA

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AO8800 Features

* VDS (V) = 30V ID = 6.4A RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 40mΩ (VGS = 2.5V) RDS(ON) < 70mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximu

AO8800 General Description

The AO8800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configur.

AO8800 Datasheet (226.44 KB)

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Datasheet Details

Part number:

AO8800

Manufacturer:

ALPHA

File Size:

226.44 KB

Description:

Common-drain dual n-channel enhancement mode field effect transistor.

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AO8800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor ALPHA

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