AO8806 Dual N-Channel MOSFET

Description

Dec 2002 AO8806 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AO8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number: AO8806
Manufacturer: ETC
File Size: 231.29 KB
Datasheet: AO8806_ETC.pdf
Description: Dual N-Channel MOSFET

Features

* VDS (V) = 20V ID = 6 A RDS(ON) < 25mΩ (VGS = 4.5V) RDS(ON) < 30mΩ (VGS = 2.5V) RDS(ON) < 40mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-

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AO8806 Dual N-Channel MOSFET ETC

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