AO8803 - Dual P-Channel Enhancement Mode Field Effect Transistor
The AO8803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.
This device is suitable for use as a load switch or in PWM applications.
It is ESD protected.
Standard Product AO8803 is Pb-free (meets ROHS & Sony 259 specificat
AO8803 Features
* VDS (V) = -12V ID = -7 A (VGS = -4.5V) RDS(ON) < 18mΩ (VGS = -4.5V) RDS(ON) < 22mΩ (VGS = -2.5V) RDS(ON) < 29mΩ (VGS = -1.8V) ESD Rating: 4KV HBM D1 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 S1 G2 D2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VD
