AO8803 - Dual P-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors

Datasheet Details

Part number	AO8803
Manufacturer	Alpha & Omega Semiconductors
File Size	147.73 KB
Description	Dual P-Channel Enhancement Mode Field Effect Transistor
Datasheet	AO8803_AlphaOmegaSemiconductors.pdf

The AO8803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

VDS (V) = -12V ID = -7 A (VGS = -4.5V) RDS(ON) < 18mΩ (VGS = -4.5V) RDS(ON) < 22mΩ (VGS = -2.5V) RDS(ON) < 29mΩ (VGS = -1.8V) ESD Rating: 4KV HBM D1 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 S1 G2 D2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -12 ±8 -7 -5.8 -20 1.4 0.9 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°.

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Other Datasheets by Alpha & Omega Semiconductors

AO8808 - Dual N-Channel Enhancement Mode Field Effect Transistor
AO8808A - 20V Dual N-Channel MOSFET
AO8810 - 20V Common-Drain Dual N-Channel MOSFET
AO8814 - 20V Common-Drain Dual N-Channel MOSFET
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Published: Aug 29, 2009 |