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AO8803

Dual P-Channel Enhancement Mode Field Effect Transistor

AO8803 Features

* VDS (V) = -12V ID = -7 A (VGS = -4.5V) RDS(ON) < 18mΩ (VGS = -4.5V) RDS(ON) < 22mΩ (VGS = -2.5V) RDS(ON) < 29mΩ (VGS = -1.8V) ESD Rating: 4KV HBM D1 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 S1 G2 D2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VD

AO8803 General Description

The AO8803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8803 is Pb-free (meets ROHS & Sony 259 specificat.

AO8803 Datasheet (147.73 KB)

Preview of AO8803 PDF

Datasheet Details

Part number:

AO8803

Manufacturer:

Alpha & Omega Semiconductors

File Size:

147.73 KB

Description:

Dual p-channel enhancement mode field effect transistor.

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TAGS

AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors

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