AO8804 Dual N-Channel MOSFET

Description

March 2003 AO8804 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AO8804 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number: AO8804
Manufacturer: ETC
File Size: 379.51 KB
Datasheet: AO8804_ETC.pdf
Description: Dual N-Channel MOSFET

Features

* VDS (V) = 20V ID = 8A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) RDS(ON) < 19mΩ (VGS = 2.5V) RDS(ON) < 27mΩ (VGS = 1.8V) ESD Rating: 2000V HBM TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Pa

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AO8804 Dual N-Channel MOSFET ETC

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