AO8804 - Dual N-Channel MOSFET

AO8804 Datasheet Preview — Preview of AO8804 PDF

Datasheet Details

Part number	AO8804
Manufacturer	ETC
File Size	379.51 KB
Description	Dual N-Channel MOSFET
Datasheet	AO8804_ETC.pdf

AO8804 Product details

Description

The AO8804 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

Features

VDS (V) = 20V ID = 8A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) RDS(ON) < 19mΩ (VGS = 2.5V) RDS(ON) < 27mΩ (VGS = 1.8V) ESD Rating: 2000V HBM TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±12 8 6.3 30 1.5 1.08 -55 to 150 Units V V A TA=25°C.

📁 AO8804 Similar Datasheet

AO8800 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor (ALPHA)
AO8801 - Dual P-Channel MOSFET (VBsemi)
AO8801A - P-Channel MOSFET (FreesCale)
AO8803 - Dual P-Channel Enhancement Mode Field Effect Transistor (Alpha & Omega Semiconductors)
AO8807 - Dual P-Channel FET (FreesCale)
AO8807L - P-Channel MOSFET (FreesCale)
AO8808 - Dual N-Channel Enhancement Mode Field Effect Transistor (Alpha & Omega Semiconductors)
AO8808A - Dual N-Channel MOSFET (VBsemi)

Other Datasheets by ETC

AO8802 - Dual N-Channel MOSFET
AO8806 - Dual N-Channel MOSFET

Published: Mar 26, 2005 |