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AO8808 Datasheet - Alpha & Omega Semiconductors

AO8808 Dual N-Channel Enhancement Mode Field Effect Transistor

The AO8808 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V V GS(MAX) rating. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configur.

AO8808 Features

* VDS (V) = 20V ID = 8A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 15mΩ (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 2.5V) RDS(ON) < 28mΩ (VGS = 1.8V) TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VD

AO8808_AlphaOmegaSemiconductors.pdf

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Datasheet Details

Part number:

AO8808

Manufacturer:

Alpha & Omega Semiconductors

File Size:

141.87 KB

Description:

Dual n-channel enhancement mode field effect transistor.

AO8808 Distributor

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TAGS

AO8808 AO8808 Dual N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors