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AO8808

Dual N-Channel Enhancement Mode Field Effect Transistor

AO8808 Features

* VDS (V) = 20V ID = 8A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 15mΩ (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 2.5V) RDS(ON) < 28mΩ (VGS = 1.8V) TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VD

AO8808 General Description

The AO8808 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V V GS(MAX) rating. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configur.

AO8808 Datasheet (141.87 KB)

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Datasheet Details

Part number:

AO8808

Manufacturer:

Alpha & Omega Semiconductors

File Size:

141.87 KB

Description:

Dual n-channel enhancement mode field effect transistor.

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TAGS

AO8808 Dual N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors

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