AO8808 - Dual N-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors

AO8808 Datasheet Preview — Preview of AO8808 PDF

Datasheet Details

Part number	AO8808
Manufacturer	Alpha & Omega Semiconductors
File Size	141.87 KB
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	AO8808_AlphaOmegaSemiconductors.pdf

AO8808 Product details

Description

The AO8808 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V V GS(MAX) rating.

Features

VDS (V) = 20V ID = 8A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 15mΩ (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 2.5V) RDS(ON) < 28mΩ (VGS = 1.8V) TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±12 8 6.3 30 1.4 1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=.

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Other Datasheets by Alpha & Omega Semiconductors

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Published: Aug 29, 2009 |