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AO8818

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AO8818 Features

* VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 20mΩ (VGS = 4.5V) RDS(ON) < 27mΩ (VGS = 2.5V) ESD Rating: 1500V HBM D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol

AO8818 General Description

The AO8818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its c.

AO8818 Datasheet (180.75 KB)

Preview of AO8818 PDF

Datasheet Details

Part number:

AO8818

Manufacturer:

Alpha & Omega Semiconductors

File Size:

180.75 KB

Description:

Common-drain dual n-channel enhancement mode field effect transistor.

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AO8818 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors

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