AO8818 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors

AO8818 Datasheet Preview — Preview of AO8818 PDF

Datasheet Details

Part number	AO8818
Manufacturer	Alpha & Omega Semiconductors
File Size	180.75 KB
Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	AO8818_AlphaOmegaSemiconductors.pdf

AO8818 Product details

Description

The AO8818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

Features

VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 20mΩ (VGS = 4.5V) RDS(ON) < 27mΩ (VGS = 2.5V) ESD Rating: 1500V HBM D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 ±12 7 5.5 30 1.5 0.96 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°.

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Other Datasheets by Alpha & Omega Semiconductors

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Published: Aug 29, 2009 |