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AO8818 Datasheet - Alpha & Omega Semiconductors

AO8818 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

The AO8818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its c.

AO8818 Features

* VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 20mΩ (VGS = 4.5V) RDS(ON) < 27mΩ (VGS = 2.5V) ESD Rating: 1500V HBM D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol

AO8818_AlphaOmegaSemiconductors.pdf

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Datasheet Details

Part number:

AO8818

Manufacturer:

Alpha & Omega Semiconductors

File Size:

180.75 KB

Description:

Common-drain dual n-channel enhancement mode field effect transistor.

AO8818 Distributor

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AO8818 AO8818 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors