AO8818 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors

Description

www.DataSheet4U.com AO8818 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AO8818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: AO8818
Manufacturer: Alpha & Omega Semiconductors
File Size: 180.75 KB
Datasheet: AO8818_AlphaOmegaSemiconductors.pdf
Description: Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Features

* VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 20mΩ (VGS = 4.5V) RDS(ON) < 27mΩ (VGS = 2.5V) ESD Rating: 1500V HBM D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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AO8818 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors

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