Datasheet4U Logo Datasheet4U.com

AO8818 Datasheet - Alpha & Omega Semiconductors

AO8818 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

The AO8818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its c.

AO8818 Features

* VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 20mΩ (VGS = 4.5V) RDS(ON) < 27mΩ (VGS = 2.5V) ESD Rating: 1500V HBM D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol

AO8818 Datasheet (180.75 KB)

Preview of AO8818 PDF
AO8818 Datasheet Preview Page 2 AO8818 Datasheet Preview Page 3

Datasheet Details

Part number:

AO8818

Manufacturer:

Alpha & Omega Semiconductors

File Size:

180.75 KB

Description:

Common-drain dual n-channel enhancement mode field effect transistor.

📁 Related Datasheet

AO8810 20V Common-Drain Dual N-Channel MOSFET (Alpha & Omega Semiconductors)

AO8810 Dual N-Channel MOSFET (VBsemi)

AO8814 20V Common-Drain Dual N-Channel MOSFET (Alpha & Omega Semiconductors)

AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor (Alpha & Omega Semiconductors)

AO8800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor (ALPHA)

AO8800 Dual N-Channel FET (FreesCale)

AO8801 Dual P-Channel MOSFET (VBsemi)

AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor (Alpha & Omega Semiconductors)

TAGS

AO8818 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors

AO8818 Distributor