AO8801A Datasheet, mosfet equivalent, FreesCale

PDF File Details

Part number: AO8801A

Manufacturer: FreesCale

File Size: 339.63KB

Download: 📄 Datasheet

Description: P-Channel MOSFET

Datasheet Preview: AO8801A 📥 Download PDF (339.63KB)

AO8801A Features and benefits

VDS ID (at VGS=-10V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) RDS(ON) (at VGS= -1.8V) -20V -4.5A < 42mΩ < 54mΩ < 68mΩ D1 D2 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5.

AO8801A Application

Features VDS ID (at VGS=-10V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) RDS(ON) (at VGS= -1.8V) -20V -4.5A < 42m.

AO8801A Description

The AO8801A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS ID (at VGS=-10V) RDS(ON).

Image gallery

Page 2 of AO8801A Page 3 of AO8801A

TAGS

AO8801A
P-Channel
MOSFET
FreesCale

📁 Related Datasheet

AO8801 - Dual P-Channel MOSFET (VBsemi)
AO8801-VB AO8801-VB Datasheet Dual P-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) 0.036 at V GS = - 10 V 0.0.

AO8801 - Dual P-Channel Enhancement Mode Field Effect Transistor (Alpha & Omega Semiconductors)
www..com AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO8801 uses advanced trench technology to .

AO8801 - Dual P-Channel FET (FreesCale)
AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO8801 uses advanced trench technology to provide excellent RD.

AO8800 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor (ALPHA)
July 2001 AO8800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8800 uses advanced trench technology .

AO8800 - Dual N-Channel FET (FreesCale)
AO8800 General Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor The AO8800 uses advanced trench technology to provid.

AO8802 - Dual N-Channel MOSFET (ETC)
August 2002 AO8802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8802 uses advanced trench technolog.

AO8802 - Dual N-Channel FET (FreesCale)
AO8802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8802 uses advanced trench technology to provide.

AO8803 - Dual P-Channel Enhancement Mode Field Effect Transistor (Alpha & Omega Semiconductors)
www..com AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO8803 uses advanced trench technology to .

AO8803 - P-Channel MOSFET (FreesCale)
Freescale P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to e.

AO8804 - Dual N-Channel MOSFET (ETC)
March 2003 AO8804 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8804 uses advanced trench technology.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts