AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors

Description

www.DataSheet4U.com AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AO8816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: AO8816
Manufacturer: Alpha & Omega Semiconductors
File Size: 140.91 KB
Datasheet: AO8816_AlphaOmegaSemiconductors.pdf
Description: Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Features

* VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 17mΩ (VGS = 4.5) RDS(ON) < 23mΩ (VGS = 2.5V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltag

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AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors

Alpha & Omega Semiconductors AO8816-like datasheet