AO8816 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors

Datasheet Details

Part number	AO8816
Manufacturer	Alpha & Omega Semiconductors
File Size	140.91 KB
Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	AO8816_AlphaOmegaSemiconductors.pdf

The AO8816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 17mΩ (VGS = 4.5) RDS(ON) < 23mΩ (VGS = 2.5V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 ±12 8 6 30 1.5 1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG.

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Other Datasheets by Alpha & Omega Semiconductors

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Published: Aug 29, 2009 |