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AO8801 - Dual P-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Description

The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

It is ESD protected.

Features

  • VDS (V) = -20V ID = -4.7 A (V GS = -4.5V) RDS(ON) < 42mΩ (VGS = -4.5V) RDS(ON) < 53mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 D D2 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -20 ±8 -4.7 -3.7 -30 1.4 0.9 -55 to 150 Units V V A TA=25°C TA=70°C.

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Datasheet Details

Part number AO8801
Manufacturer Alpha & Omega Semiconductors
File Size 139.27 KB
Description Dual P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet AO8801 Datasheet
Additional preview pages of the AO8801 datasheet.

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www.DataSheet4U.com AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8801 is Pbfree (meets ROHS & Sony 259 specifications). AO8801L is a Green Product ordering option. AO8801 and AO8801L are electrically identical. Features VDS (V) = -20V ID = -4.7 A (V GS = -4.5V) RDS(ON) < 42mΩ (VGS = -4.5V) RDS(ON) < 53mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.
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