AO8818 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Product Overview

Alpha & Omega Semiconductors

Datasheet Details

Part number	AO8818
Manufacturer	Alpha & Omega Semiconductors
File Size	180.75 KB
Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	AO8818 Datasheet
Additional preview pages of the AO8818 datasheet.

Product details

Description

The AO8818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

Features

VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 20mΩ (VGS = 4.5V) RDS(ON) < 27mΩ (VGS = 2.5V) ESD Rating: 1500V HBM D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 ±12 7 5.5 30 1.5 0.96 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°.

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Other Datasheets by Alpha & Omega Semiconductors

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Published: Aug 29, 2009 |