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AO8810 - 20V Common-Drain Dual N-Channel MOSFET

General Description

The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge.

It is ESD protected.

This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration.

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AO8810 20V Common-Drain Dual N-Channel MOSFET General Description The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS= 4.5V) RDS(ON) (at VGS = 4.0V) RDS(ON) (at VGS = 3.1V) RDS(ON) (at VGS = 2.5V) RDS(ON) (at VGS = 1.8V) ESD protected 20V 7A < 20mW < 20.5mW < 21.5mW < 23mW < 28mW TSSOP8 Top View Bottom View TSSOP-8 Top View D1 D2 D1/D2 1 S1 2 S1 3 G1 4 8 D1/D2 7 S2 6 S2 5 G2 G1 1.8KW G2 1.