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AO8816 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Description

The AO8816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Standard Product AO8816 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 17mΩ (VGS = 4.5) RDS(ON) < 23mΩ (VGS = 2.5V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 ±12 8 6 30 1.5 1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG.

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Datasheet Details

Part number AO8816
Manufacturer Alpha & Omega Semiconductors
File Size 140.91 KB
Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet AO8816 Datasheet
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www.DataSheet4U.com AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO8816 is Pb-free (meets ROHS & Sony 259 specifications). AO8816L is a Green Product ordering option. AO8816 and AO8816L are electrically identical. Features VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 17mΩ (VGS = 4.5) RDS(ON) < 23mΩ (VGS = 2.
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