AO8816 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Product Overview

Alpha & Omega Semiconductors

Part number	AO8816
Manufacturer	Alpha & Omega Semiconductors
File Size	140.91 KB
Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	AO8816 Datasheet
Additional preview pages of the AO8816 datasheet.

The AO8816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 17mΩ (VGS = 4.5) RDS(ON) < 23mΩ (VGS = 2.5V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 ±12 8 6 30 1.5 1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG.

📁 Similar Datasheet

AO8810 - Dual N-Channel MOSFET (VBsemi)
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AO8800 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor (ALPHA)
AO8800 - Dual N-Channel FET (FreesCale)
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Other Datasheets by Alpha & Omega Semiconductors

AO8810 - 20V Common-Drain Dual N-Channel MOSFET
AO8814 - 20V Common-Drain Dual N-Channel MOSFET
AO8818 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8801 - Dual P-Channel Enhancement Mode Field Effect Transistor
AO8801A - 20V P-Channel MOSFET
AO8803 - Dual P-Channel Enhancement Mode Field Effect Transistor

Published: Aug 29, 2009 |