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AO8814 - 20V Common-Drain Dual N-Channel MOSFET

General Description

The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

Key Features

  • VDS (V) = 20V ID = 7.5 A (VGS = 10V) RDS(ON) < 16mW (VGS = 10V) RDS(ON) < 18mW (VGS = 4.5V) RDS(ON) < 20mW (VGS = 3.6V) RDS(ON) < 24mW (VGS = 2.5V) RDS(ON) < 34mW (VGS = 1.8V) ESD Rating: 2500V HBM TSSOP-8 Top View D1 D2 D1/D2 1 S1 2 S1 3 G1 4 8 D1/D2 7 S2 6 S2 5 G2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM TA.

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AO8814 20V Common-Drain Dual N-Channel MOSFET General Description The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Features VDS (V) = 20V ID = 7.5 A (VGS = 10V) RDS(ON) < 16mW (VGS = 10V) RDS(ON) < 18mW (VGS = 4.5V) RDS(ON) < 20mW (VGS = 3.6V) RDS(ON) < 24mW (VGS = 2.5V) RDS(ON) < 34mW (VGS = 1.