AO8814 - 20V Common-Drain Dual N-Channel MOSFET

Product Overview

Alpha & Omega Semiconductors

Datasheet Details

Part number	AO8814
Manufacturer	Alpha & Omega Semiconductors
File Size	352.46 KB
Description	20V Common-Drain Dual N-Channel MOSFET
Datasheet	AO8814 Datasheet
Additional preview pages of the AO8814 datasheet.

Product details

Description

The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

Features

VDS (V) = 20V ID = 7.5 A (VGS = 10V) RDS(ON) < 16mW (VGS = 10V) RDS(ON) < 18mW (VGS = 4.5V) RDS(ON) < 20mW (VGS = 3.6V) RDS(ON) < 24mW (VGS = 2.5V) RDS(ON) < 34mW (VGS = 1.8V) ESD Rating: 2500V HBM TSSOP-8 Top View D1 D2 D1/D2 1 S1 2 S1 3 G1 4 8 D1/D2 7 S2 6 S2 5 G2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM TA.

📁 Similar Datasheet

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Other Datasheets by Alpha & Omega Semiconductors

AO8810 - 20V Common-Drain Dual N-Channel MOSFET
AO8816 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
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Published: Aug 29, 2009 |