AO8808 - Dual N-Channel Enhancement Mode Field Effect Transistor

Product Overview

Alpha & Omega Semiconductors

Datasheet Details

Part number	AO8808
Manufacturer	Alpha & Omega Semiconductors
File Size	141.87 KB
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	AO8808 Datasheet
Additional preview pages of the AO8808 datasheet.

Product details

Description

The AO8808 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V V GS(MAX) rating.

Features

VDS (V) = 20V ID = 8A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 15mΩ (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 2.5V) RDS(ON) < 28mΩ (VGS = 1.8V) TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±12 8 6.3 30 1.4 1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=.

📁 Similar Datasheet

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Other Datasheets by Alpha & Omega Semiconductors

AO8808A - 20V Dual N-Channel MOSFET
AO8801 - Dual P-Channel Enhancement Mode Field Effect Transistor
AO8801A - 20V P-Channel MOSFET
AO8803 - Dual P-Channel Enhancement Mode Field Effect Transistor
AO8807 - Dual P-Channel FET
AO8810 - 20V Common-Drain Dual N-Channel MOSFET

Published: Aug 29, 2009 |