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AO8808A - 20V Dual N-Channel MOSFET

Datasheet Summary

Description

The AO8808A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

Standard Product AO8808A is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 20V ID = 7.9A (VGS = 10V) RDS(ON) < 14mW (VGS = 10V) RDS(ON) < 15mW (VGS = 4.5V) RDS(ON) < 20mW (VGS = 2.5V) RDS(ON) < 28mW (VGS = 1.8V) ESD Rating: 2000V HBM TSSOP-8 Top View D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 6 S2 5 G2 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM TA=25°C Power Dissipation A TA=70°C P.

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Datasheet preview – AO8808A

Datasheet Details

Part number AO8808A
Manufacturer Alpha & Omega Semiconductors
File Size 308.52 KB
Description 20V Dual N-Channel MOSFET
Datasheet download datasheet AO8808A Datasheet
Additional preview pages of the AO8808A datasheet.

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Full PDF Text Transcription

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AO8808A 20V Dual N-Channel MOSFET General Description The AO8808A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. Standard Product AO8808A is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 20V ID = 7.9A (VGS = 10V) RDS(ON) < 14mW (VGS = 10V) RDS(ON) < 15mW (VGS = 4.5V) RDS(ON) < 20mW (VGS = 2.5V) RDS(ON) < 28mW (VGS = 1.
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