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SIHLD110 Power MOSFET

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Description

www.vishay.com IRLD110, SiHLD110 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Features

* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* For Automatic Insertion
* End Stackable
* Logic-Level Gate Drive
* RDS(on) Specified at VGS = 4 V and 5 V
* 175 °C Operating Temperature
* Material categorization: For definitions of

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SIHLD110 Power MOSFET Vishay
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