SiHL520 Power MOSFET

Vishay

Description

Power MOSFET IRL520, SiHL520 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 100 VGS = 5.0 V 12 Qgs (nC) 3.0 Qgd (nC) 7.1 .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: SiHL520
Manufacturer: Vishay ↗
File Size: 729.70 KB
Datasheet: SiHL520-Vishay.pdf
Description: Power MOSFET

Features

* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Logic-Level Gate Drive
* RDS(on) Specified at VGS = 4 V and 5 V
* 175 °C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Compliant to RoHS Directive 2002/95/EC Availa

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRL520PbF SiHL520-E3 IRL520 SiHL520 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL

SiHL520 Distributors

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SiHL520 Power MOSFET Vishay

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