SiHL530 - Power MOSFET
G G D S S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combi nation of fast swi tching, ruggedized device design, low on -resistance a nd cost effectiveness.
The TO-220AB package is univers ally preferred for all commercial-industrial app licati
SiHL530 Features
* 100 0.16
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Logic-Level Gate Drive
* R DS(on) Specified at VGS = 4 V and 5 V
* 175 °C Operating Temperature
* F ast Switching
* Ease of Paralleling
* Compliant to RoHS Directive 2002/95/
