SiHL530 Datasheet - Vishay

SiHL530 Power MOSFET

G G D S S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combi nation of fast swi tching, ruggedized device design, low on -resistance a nd cost effectiveness. The TO-220AB package is univers ally preferred for all commercial-industrial app licati.

SiHL530 Features

* 100 0.16

* Dynamic dV/dt Rating

* Repetitive Avalanche Rated

* Logic-Level Gate Drive

* R DS(on) Specified at VGS = 4 V and 5 V

* 175 °C Operating Temperature

* F ast Switching

* Ease of Paralleling

* Compliant to RoHS Directive 2002/95/

SiHL530-Vishay.pdf