SIR788DP N-Channel MOSFET

Vishay

SIR788DP Description

New Product SiR788DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max.0.0034 at VGS = 1.

SIR788DP Features

* SkyFET® Monolithic TrenchFET® Gen III Power MOSFET and Schottky Diode
* 100 % Rg Tested
* 100 % Avalanche Tested

SIR788DP Applications

* Synchronous Buck Converter
* DC/DC D Schottky G Diode S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °

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Datasheet Details

Part number: SIR788DP
Manufacturer: Vishay ↗
File Size: 338.67 KB
Datasheet: SIR788DP-Vishay.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET Vishay

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