* TrenchFET® power MOSFET
* Package with low thermal resistance
* Maximum 175 ºC junction temperature
* Low RDS(on) minimizes power loss from conduction
* Compatible with logic-level gate driving
* 100 % Rg and UIS tested
* Material categorizat
SUM60061EL Datasheet (179.27 KB)
SUM60061EL
179.27 KB
P-channel mosfet.
www.vishay.com
SUM60061EL
Vishay Siliconix
P-Channel 80 V (D-S) MOSFET
TO-263
Top View
S D G
PRODUCT SUMMARY
VDS (V) RDS(on) max. (Ω) at VGS = -.
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