Si1034CX
FEATURES
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.396 at VGS = 4.5 V 20 0.456 at VGS = 2.5 V 0.546 at VGS = 1.8 V 0.760 at VGS = 1.5 V ID (A) 0.5 0.2 0.2 0.05 0.75 Qg (Typ.)
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Trench FET® Power MOSFET 100 % Rg Tested Gate-Source ESD Protected: 1000 V Material categorization: For definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Load/Power Switching for Portable Devices
- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
- Battery Operated Systems
- Power Supply Converter Circuits
SC-89
S1 1 6 D1
Marking Code 4 XX YY Lot Traceability and Date Code Part # Code
G1
G2
D2
S2
Top View Ordering Information: Si1034CX-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipationa Operating Junction and Storage Temperature...
