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Si4668DY N-Channel 25-V (D-S) MOSFET

Si4668DY Description

N-Channel 25-V (D-S) MOSFET Si4668DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 25 0.0125 at VGS = 4.5 V ID (A)a .

Si4668DY Features

* Halogen-free According to IEC 61249-2-21 Available
* TrenchFET® Power MOSFET

Si4668DY Applications

* Synchronous Buck - High Side D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drai

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Datasheet Details

Part number
Si4668DY
Manufacturer
Vishay ↗
File Size
99.74 KB
Datasheet
Si4668DY-Vishay.pdf
Description
N-Channel 25-V (D-S) MOSFET

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