* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg and UIS tested
* Compliant to RoHS Directive 2002/95/EC D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Para
Si4922BDY Datasheet (168.58 KB)
Si4922BDY
168.58 KB
Dual n-channel 30-v (d-s) mosfet.
Dual N-Channel 30-V (D-S) MOSFET
Si4922BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.016 at VGS = 10 V 30 0.018 at VGS = 4.5 V
0.024.
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