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Si7170DP N-Channel MOSFET

Si7170DP Description

N-Channel 30-V (D-S) MOSFET Si7170DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.0034 at VGS = 10 V 30 0.0043 at VGS = 4.5 V ID (A)a .

Si7170DP Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg and Avalanche Tested

Si7170DP Applications

* Notebook PC Core - Low Side
* VRM POL D G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage TC = 25 °C VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed D

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N-Channel MOSFET Vishay
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