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Si7190DP N-Channel MOSFET

Si7190DP Description

New Product N-Channel 250-V (D-S) MOSFET Si7190DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 250 0.118 at VGS = 10 V 0.124 at VGS = 6 V.

Si7190DP Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* Low Thermal Resistance PowerPAK® Package
* 100 % Rg Tested
* 100 % UIS Tested

Si7190DP Applications

* Primary Side Switch
* Industrial
* POL D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Dio

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N-Channel MOSFET Vishay
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