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Si7682DP N-Channel 30-V (D-S) MOSFET

Si7682DP Description

N-Channel 30-V (D-S) MOSFET Si7682DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0090 at VGS = 10 V 0.0130 at VGS = 4.5 V ID (A)a .

Si7682DP Features

* Halogen-free According to IEC 61249-2-21 Available
* TrenchFET® Power MOSFET
* 100 % Rg Tested PowerPAK SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3G 4 Bottom View Ordering Information: Si7682DP-T1-E3 (Lead (Pb)-free) Si7682DP-T1-GE3 (Lead (Pb)-free and Halogen-f

Si7682DP Applications

* High-Side DC/DC Conversion - Notebook - Server D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current

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Datasheet Details

Part number
Si7682DP
Manufacturer
Vishay ↗
File Size
87.20 KB
Datasheet
Si7682DP-Vishay.pdf
Description
N-Channel 30-V (D-S) MOSFET

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N-Channel 30-V D-S MOSFET Vishay
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