Si7686DP Datasheet - Vishay

Si7686DP, N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET Si7686DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0095 at VGS = 10 V 0.014 at VGS = 4.5 V PowerPAK

Features

* Halogen-free available
* TrenchFET® Power MOSFET
* New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile
* Optimized for High-Side Synchronous Operation

Applications

* DC/DC Converters D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C I

Si7686DP-Vishay.pdf