* Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS) Available
* Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low fig
SiHD5N50D Datasheet (202.73 KB)
SiHD5N50D
202.73 KB
D series power mosfet.
www.vishay.com SiHD5N50D Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC).
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