* Fast body diode MOSFET using E series technology
* Reduced trr, Qrr, and IRRM
* Completely lead (Pb)-free device
* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Low switching losses due to reduced Qrr
* Ultra low gate ch
SiHH11N60EF Datasheet (199.09 KB)
SiHH11N60EF
199.09 KB
E series power mosfet.
www.vishay.com SiHH11N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 .
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