* Fully lead (Pb)-free device
* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS)
* Kelvin connection for reduced gate noise
SiHH21N60E Datasheet (191.73 KB)
SiHH21N60E
191.73 KB
E series power mosfet.
www.vishay.com SiHH21N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C Qg max. (nC) Qgs (nC.
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