* 4th generation E series technology
* Low figure-of-merit (FOM) Ron x Qg
* Low effective capacitance (Co(er))
* Reduced switching and conduction losses
* Avalanche energy rated (UIS)
* Material categorization: for definitions of compliance please see
SiHK125N60EF Datasheet (265.12 KB)
SiHK125N60EF
265.12 KB
Power mosfet.
www.vishay.com SiHK125N60EF Vishay Siliconix EF Series Power MOSFET With Fast Body Diode Drain tab Gate pin 1 Driver source pin 2 Source pin 3 to 8.
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