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SiHLZ44 Power MOSFET

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Description

Power MOSFET IRLZ44, SiHLZ44 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.0 V 66.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Features

* Dynamic dV/dt Rating
* Logic-Level Gate Drive
* RDS(on) Specified at VGS = 4 V and 5 V
* 175 °C Operating Temperature Available RoHS
* COMPLIANT
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRLZ44PbF SiHLZ44-E3 IRLZ44 SiHLZ44 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBO

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