SiRS4600DP - N-Channel 60V MOSFET

Vishay

Key Features

TrenchFET® Gen IV power MOSFET.
Very low RDS x Qg figure-of-merit (FOM).
Leadership RDS(on) minimizes power loss from conduction.
100 % Rg and UIS tested.
Enhance power dissipation and lower RthJC.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

SiRS4600DP n-channel 60v mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SiRS4600DP
Manufacturer	Vishay
File Size	233.25 KB
Description	N-Channel 60V MOSFET
Datasheet	SiRS4600DP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com SiRS4600DP Vishay Siliconix N-Channel 60 V (D-S) MOSFET PowerPAK® SO-8S Single D D8 D7 D6 5 6.00 mm 5.00 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration 1 2S 3S 4S G Bottom View 60 0.00115 0.0013 81 359 Single FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • Leadership RDS(on) minimizes power loss from conduction • 100 % Rg and UIS tested • Enhance power dissipation and lower RthJC • Material categorization: for definitions of compliance please see www.vishay.