* TrenchFET® Gen IV power MOSFET
* Very low RDS x Qg figure-of-merit (FOM)
* Leadership RDS(on) minimizes power loss from conduction
* 100 % Rg and UIS tested
* Enhance power dissipation and lower RthJC
* Material categorization: for definitions of com
SiRS4600DP Datasheet (233.25 KB)
SiRS4600DP
233.25 KB
N-channel 60v mosfet.
www.vishay.com
SiRS4600DP
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
PowerPAK® SO-8S Single D
D8 D7 D6 5
6.00 mm
5.00 mm
Top View
PRODUCT SUM.
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