SiS427EDN - P-Channel 30V MOSFET
SiS427EDN Features
* TrenchFET® power MOSFET
* 100 % Rg and UIS tested
* Typical ESD performance: 2500 V (HBM)
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS S
* Notebook battery charging
* Notebook adapter
