SiS452DN Datasheet - Vishay

SiS452DN, N-Channel MOSFET

New Product SiS452DN Vishay Siliconix N-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) 0.00325 at VGS = 10 V 0.0048 at VGS = 4.5 V.

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested
* 100 % UIS Tested

Applications

* 3.30 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 3.30 mm
* POL
* DC/DC D G Bottom View Ordering Information: SiS452DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Volta

SiS452DN-Vishay.pdf